Flux Profile Modeling using Monte Carlo Simulation
Автор:Ramprasad Vijayagopal and Rama Venkat Год: 2010 Издание:LAP Lambert Academic Publishing Страниц: 104 ISBN: 9783838369389 Molecular Beam Epitaxy (MBE) is a process by which semiconductor films are grown on the substrate by physical vapor deposition of the source material in an ultra high vacuum environment. Spatial variations in flux are a result of the shape of the crucible and the geometry of the growth chamber. A process simulation tool for MBE based on a phenomenological model is proposed and elaborated. The tool can be used in industry to simulate the effusion and deposition of molecular beams by taking into account different parameters that influence the process. Additionally, it can generate deposition profiles created by effusing flux species, on the platen containing the wafers.
